PART |
Description |
Maker |
BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管,耗尽 N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode From old datasheet system
|
Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. Vishay Telefunken VISAY[Vishay Siliconix]
|
3SK295 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
BF998 BF998R |
Silicon N-channel dual-gate MOS-FETs
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
3SK194 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
BF998R BF998 BF998/T1 |
TRANSISTOR MOSFET Silicon N-channel dual-gate
|
Philips
|
3SK319 |
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
|
Hitachi Semiconductor
|
3SK317 3SK317ZR-TL-E |
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Renesas Electronics Corporation
|
MFE211 MFE212 |
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS N沟道双栅氮化硅钝化马鞍山场效应晶体管 From old datasheet system
|
Motorola Mobility Holdings, Inc. Motorola, Inc.
|
KK74HCT20A KK74HCT20AD KK74HCT20AN |
Dual 4-Input NAND Gate High-Performance Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
KK74HC20A KK74HC20AD KK74HC20AN |
Dual 4-Input NAND Gate High-Performance Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
IN74HC20A IN74HC20AD IN74HC20AN |
Dual 4-Input NAND Gate High-Performance Silicon-Gate CMOS
|
IK Semicon Co., Ltd
|
KK4002B |
Dual 4-Input NOR Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA
|